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 | Arvind Kumar; Massimo V. Fischetti; Steven E. Laux (2005). "Monte-Carlo Simulations of Performance Scaling in Strained-Si nMOSFETs" in RC23643 | Abstract and Preprint |
| Arvind Kumar; Massimo V. Fischetti; Steven E. Laux (2005). "Monte-Carlo Simulations of Performance Scaling in Strained-Si nMOSFETs" in RC23546 | Abstract and Preprint |
| Matteo Fischetti; Andrea Lodi (2005). "Repairing MIP infeasibility through Local Branching" in RC23532 | Abstract and Preprint |
| M. V. Fischetti; S. E. Laux; P. M. Solomon; A. Kumar (2004). "Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and Mainstream VLSI Technology" in RC23381 | Abstract and Preprint |
| M. V. Fischetti, S. E. Laux, A. Kumar (2003). "Simulation of Quantum Electronic Transport in Small Devices: A Master Equation Approach" IEEE International Electron Devices Meeting - Technical Digest. , IEEE. , p.467-70 | Abstract |
| Massimo V. Fischetti (2003). "Scaling MOSFETs to the limit: A physicist's perspective" in RC22828 | Abstract and Preprint |
| Steven E. Laux, Arvind Kumar, Massimo V. Fischetti (2002). "Ballistic FET Modeling using QDAME: Quantum Device
Analysis by Modal Evaluation" in IEEE Transactions on Nanotechnology, volume 1, (no 4), pages 255-9 | Abstract and Preprint |
| Steven E. Laux, Arvind Kumar, Massimo V. Fischetti (2003). "Does Circulation in Individual Current States Survive in the Total Current Density?" in RC22798 | Abstract and Preprint |
| Paul M. Solomon, Steven E. Laux (2001). "The Ballistic FET: Design, Capacitance and Speed Limit" IEEE International Electron Devices Meeting - IEDM 2001. Technical Digest. , IEEE, p.95-8 | Abstract |
| M. V. Fischetti and S. E. Laux (2000). "Performance degradation of small silicon devices caused by long-range Coulomb interactions" in RC21634 | Abstract and Preprint |
| M. V. Fischetti, S. E. Laux, D. J. DiMaria (1999). "Coulomb Interactions and Hot-Electron Effects in Sub 0.1 µm Si MOSFETs" in RC21498 | Abstract and Preprint |
| M. V. Fischetti and S. E. Laux (1996). "Monte Carlo Simulation of Electron Transport in Si: The First 20 Years" in RC20474 | Abstract and Preprint |
| S. E. Laux and M. V. Fischetti (1995). "Transport Models for Advance Device Simulation - Truth or Consequences?" in RC20130 | Abstract and Preprint |
| G. M. Cohen; S. Bangsaruntip; S. Laux; M. J. Rooks; J. Cai; L. Gignac (2008). "Measurements of Carrier Transport in MOSFETs with Bottom-up Nanowire Channel as a Function of the Nanowire Diameter" 2008 66th Annual Device Research Conference (DRC)University of California, Santa Barbara, California, p.187-8 | Abstract |
| Arvind Kumar, Jakub Kedzierski,, Steven E. Laux (2005). "Quantum-Based Simulation Analysis of Scaling in Ultra-Thin Body Device Structures" in IEEE Transactions on Electron Devices, volume 52, (no 4), pages 614-17 | Abstract and Preprint |
| Francisco Gamiz, Massimo V. Fischetti (2003). "Remote Coulomb Scattering in Metal-Oxide-Semiconductor Field-Effect Transisitors:
Screening by Electrons in the Gate" in Applied Physics Letters, volume 83, (no 23), pages 4848-50 | Abstract and Preprint |
| Arvind Kumar, Massimo V. Fischetti, Tak H. Ning, Evgeni Gousev (2003). "Hot-Carrier Charge Trapping and Trap Generation in HfO2 and Al2O3 Field-Effect Transistors" in Journal of Applied Physics, volume 94, (no 3), pages 1728-37 | Abstract and Preprint |
| Massimo V. Fischetti, Zhibin Ren, Paul M. Solomon, Min Yang, Kern Rim (2003). "Six-band k*p Calculation of the Hole Mobility in Silicon Inversion Layers:
Dependence on Surface-Orientation, Strain, and Silicon Thickness" in Journal of Applied Physics, volume 94, (no 2), pages 1079-95 | Abstract and Preprint |
| Massimo V. Fischetti, Eduard Cartier, Deborah Neumayer (2003). "Reduction of the electron mobility in high-k MOS systems caused by remote scattering with interfacial optical phonons" in RC22734 | Abstract and Preprint |
| J. C. Tsang, J. A. Kash, and M. V. Fischetti (2001). "Hot-Carrier Distribution Functions and Hot-Luminescence Intensities
at Energies Above 1eV From Future Si FETs Operating Near 1V" in RC22072 | Abstract and Preprint |
| M. V. Fischetti, S. E. Laux and E. Crabbe (1995). "Monte Carlo Simulation of High-Energy Electron Transport in Silicon: Is There a Short-Cut to Happiness?" Hot Carriers in Semiconductors, ed. by K. Hess, J. P. LeBurton, U. Ravaiolo. , New York, Plenum, p.475-80 | Abstract |
| M. V. Fischetti, S. E. Laux (2001). "Long-Range Coulomb Interactions in Small Si Devices. Part I: Performance and Reliability" in Journal of Applied Physics, volume 89, (no 2), pages 1205-31 | Abstract and Preprint |
| M. V. Fischetti (1999). "A Master Equation Approach to the Study of Electronic Transport In Small Semiconductor Devices" in Physical Review B, volume 59, (no 7), pages 4901-17 | Abstract |
| Arvind Kumar (MIT), Steven E. Laux, Frank Stern, A. Zaslavsky, J. M. Hong, T. P. Smith III (1993). "Effect of Nonequilibrium Deep Donors in Heterostructure Modeling" in Physical Review. B. Condensed Matter, volume 48, (no 7), pages 4899-02 | Abstract |
| M. V. Fischetti, S. E. Laux (1993). "Monte Carlo Study of Electron Transport in Silicon Inversion Layers" in Physical Review. B. Condensed Matter, volume 48, (no 4), pages 2244-74 | Abstract |
| Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani (Univ. of Bologna, Italy), A. Gnudi (Univ. of Bologna, Italy), Jack A. Mandelman (IBM GTD), J. M. C. Stork, Emmanuel F. Crabbe, Farouk Odeh, Matthew R. Wordeman (1992). "Numerical Modeling of Advanced Si Devices" in IBM Journal of Research and Development, volume 36, (no 2), pages 208-32 | Abstract |
| M. V. Fischetti (1991). "The Effect of the Electron-Plasmon Interaction on the Electron Mobility in Silicon" in Physical Review. B. Condensed Matter, volume 44, (no 11), pages 5527-34 | Abstract |
| F. R. McFeely, E. Cartier, L. J. Terminello, A. Santoni, M. V. Fischetti (1990). "Soft X-Ray Induced Core Level Photoemission as a Probe of Hot Electron Dynamics in SiO??2" in Physical Review Letters, volume 65, (no 15), pages 1937-40 | Abstract |
| A. Kumar, S. Laux, F. Stern (1990). "Electron States in a GaAs Quantum Dot in a Magnetic Field" in Physical Review. B. Condensed Matter, volume 42, (no 8), pages 5166-75 | Abstract |
| D. A. Buchanan (IBM-GTD), M. V. Fischetti, D. J. DiMaria (1991). "Coulombic and Neutral Trapping Centers in Silicon Dioxide" in Physical Review. B. Condensed Matter, volume 43, (no 2), pages 1471-86 | Abstract |
| Massimo. V. Fischetti, Deborah A. Neumayer, Eduard A. Cartier (2001). "Effective electron mobility in Si inversion layers in MOS systems with a high-k insulator: The role of remote phonon scattering
" in RC22092 | Abstract and Preprint |
| M. V. Fischetti (1998). "A Master Equation Approach to the Simulation of Electron Transport In Small Semiconductor Devices" in RC21283 | Abstract and Preprint |
| M. V. Fischetti (1997). "Theory of Electron Transport In Small Semiconductor Devices Using the Pauli Master Equation" in RC20867 | Abstract |
| E. Cartier, J. C. Tsang, M. V. Fischetti and D. A. Buchanan (1997). "Light Emission During Direct and Fowler-Nordheim Tunneling in Ultra Thin MOS Tunnel Junctions" in RC20720 | Abstract |
| S. E. Laux (Univ. of IL) and M. V. Fischetti (1996). "Semiconductor Device Physics and the Modeling of Small Semiconductor Devices" in RC20597 | Abstract and Preprint |
| M. V. Fischetti and S. E. Laux (1996). "Band Structure, Deformation Potentials, and Carrier Mobility in Strained Si, Ge, and SiGe Alloys" in RC20398 | Abstract and Preprint |
| M. V. Fischetti and S. E. Laux (1995). "Monte Carlo Study of Sub-Band-Gap Impact Ionization in Small Silicon Field-Effect Transistors" in RC20203 | Abstract and Preprint |
| S. E. Laux (1995). "On Partical-Mesh Coupling in Monte Carlo Semiconductor Device Simulation" in RC20101 | Abstract and Preprint |
| S. E. Laux (1995). "On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation" in RC20081 | Abstract and Preprint |
| P. M. Solomon; S. E. Laux; L. Shi; J. Cai; W. Haensch (2009). "Experimental and Theoretical Explanation for the Orientation Dependence Gate-Induced Drain Leakage in Scaled MOSFETs" in RC24724 | Abstract and Preprint |
| Steven E. Laux, Massimino V. Fischetti (1991). "Simulation of Small Semiconductor Devices Using a Coupled Monte Carlo-Poisson Approach" Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, ed. by R. J. Trew. , New York, IEEE, p.338-46 | Abstract |
| S. E. Laux, M. V. Fischetti (1997). "Monte Carlo Study of Velocity Overshoot In Switching 0.1-Micron CMOS Inverter" Technical Digest of the International Electron Devices Meeting - 1997. New York, NY, IEEE Computer Society Press. , IEEE, p.877-80 | Abstract |
| Massimo V. Fischetti (2001). "Long-Range Coulomb Interactions in Small Si Devices. Part II: Effective Electron Mobility in Thin-Oxide Structures" in Journal of Applied Physics, volume 89, (no 2), pages 1232-50 | Abstract and Preprint |
| M. V. Fischetti (1998). "Theory of Electron Transport In Small Semiconductor Devices Using the Pauli Master Equation" in Journal of Applied Physics, volume 83, (no 1), pages 270-91 | Abstract |
| Frank Stern, Steven E. Laux (1992). "Carriers Induced at the End of a Quantum Well" in Applied Physics Letters, volume 72, (no 2), pages 809-11 | Abstract |
| Frank Stern, Steven E. Laux (1992). "Charge Transfer and Low-Temperature Electron Mobility in a Strained Si Layer in Relaxed Si??1??-??xGe??x" in Applied Physics Letters, volume 61, (no 9), pages 1110-2 | Abstract |
| E. Cartier, M. V. Fischetti, E. A. Eklund, F. R. McFeely (1993). "Impact Ionization in Silicon" in Applied Physics Letters, volume 62, (no 25), pages 3339-41 | Abstract |
| S. E. Laux, Karl Hess (1999). "Revisiting the Analytic Theory of p-n Junction Impedance: Improvements Guided by Computer Simulation Leading to a New Equivalent Circuit" in IEEE Transactions on Electron Devices, volume 46, (no 2), pages 396-412 | Abstract |
| Massimo V. Fischetti (1994). "Comments on Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide" in IEEE Transactions on Electron Devices, volume 41, (no 9), pages 1680-81 | Abstract |
| L. Carbone ((Politecnico di Milano, Italy), R. Brunetti (Univ. di Modena, Italy), C. Jacoboni (Univ. di Modena, Italy), A. Lacaita (Politecnico di Milano, Italy), M. Fischetti (1994). "Polarization Analysis of Hot-Carrier Light Emission in Silicon" in Semiconductor Science and Technology, volume 9, (no 5), pages 674-76 | Abstract |
| Massimo V. Fischetti, Steven E. Laux (1992). "Reply to Comments on Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures - Part II: Submicrometer MOSFET's" in IEEE Transactions on Electron Devices, volume 39, (no 3), pages 749-50 | Abstract |
| S. E. Laux, W. Lee (1990). "Collector Signal Delay in the Presence of Velocity Overshoot" in IEEE Electron Device Letters, volume 11, (no 4), pages 174-6 | Abstract |
| M. V. Fischetti (1991). "Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zincblende Structures. Part I: Homogeneous Transport" in IEEE Transactions on Electron Devices, volume 38, (no 3), pages 634-49 | Abstract |
| M. V. Fischetti, S. E. Laux (1991). "Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zincblende Structures. Part II: Submicrometer MOSFETs" in IEEE Transactions on Electron Devices, volume 38, (no 3), pages 650-60 | Abstract |
| D. Arnold, E. Cartier, M. V. Fischetti (1991). "Monte Carlo Calculations of Laser-Induced Free Electron Heating in SiO??2" in SPIE Proceedings, volume 1441, (no ), pages 478-87 | Abstract |
| T. P. Smith, H. Arnot, J. A. Brum, L. L. Chang, L. Esaki, A. B. Fowler, W. Hansen, J. M. Hong, D. P. Kern, C. M. Knoedler, S. E. Laux, K. Y. Lee (1990). "Quantum State Spectroscopy in Quantum Wires and Quantum Dots" Science and Engineering of One- and Zero-Dimensional Semiconductors, ed. by S. P. Beaumont, C. M. Sotomayortorres. , New York, Plenum, p.33-40 | Abstract |
| A. Abramo (Univ. Bologna, It.), L. Baudry (Univ. Sci. et Tech., Lille, Fr.), R. Brunetti (Univ. Modena, It.), R. Castagne (Univ. Paris-Sud, Fr.), M. Charef (Univ. Sci. et Tech., Lille, Fr.), F. Dessenne (Univ. Sci. et Tech., Lille, Fr.), P. Dollfus (Univ. Paris-Sud, Fr.), R. Dutton (Stanford Univ.), W. L. Engl (Univ. Aachen, Germ.), R. Fauquembergue (Univ. Sci. et Tech., Lille, Fr.), C. Fiegna (Univ. Bologna, It.), M. V. Fischetti, S. Galdin (Univ. Paris-Sud, Fr.), N. Goldsman (Univ. Md.), M. Hackel (Tech. Univ. Vienna, Austria), C. Hamaguchi (Osaka Univ., Jap.), K. Hess (Beckman Inst.), K. Hennacy (Univ. Md.), P. Hesto (Univ. Paris-Sud, Fr.), J. M. Higman (Beckman Inst.), T. Iizuka (Microelectronics Res. Labs., Jap.), C. Jungemann (Univ. Aachen, Germ.), Y. Kamakura (Osaka Univ., Jap.), H. Kosina (Tech. Univ. Vienna, Austria), T. Kunikiyo (Mitsubishi Electric Corp., Jap.), S. E. Laux, H. Lin (Univ. Md.), C. Maziar (Univ. Tex., Austin), H. Mizuno (Osaka Univ., Jap.), H. J. Peifer (Univ. Aachen, Germ.), S. Ramaswamy (Univ. Mass.), N. Sano (NTT, Jap.), P. G. Scrobhachi (Univ. Mass.), S. Selberherr (Tech. Univ. Vienna, Austria), M. Takenaka (BLSI Res. Lab., Jap.), T. W. Tang (Univ. Mass.), K. Taniguchi (Osaka Univ., Jap.), J. L. Thobel (Univ. Sci. et Tech., Lille, Fr.), R. Thoma (Univ. Aachen, Germ.), K. Tomizawa (Meiji Univ., Jap.), M. TOmizawa (NTT LSI Labs., Jap.), T. Vogelsang (Siemens, Germ.), S. L. Wang (Univ. Md.), X. Wang (Mitsubishi Electric Corp., Jap.), C. S. Yao (Stanford Univ.), P. D. Yoder (Univ. Ill, Urbana-Champaign) and A. Yoshii (NTT LSI Labs., Jap.) (1994). "A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon" in IEEE Transactions on Electron Devices, volume 41, (no 9), pages 1646-54 | Abstract |
