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Volume 25, Number 4, Page 295 (1981) Finite Element Analysis |
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Propagation of 1-μm Bubbles in Contiguous Disk Devices |
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by K. Ju, H. L. Hu, R. G. Hirko, E. B. Moore, D. Y. Saiki, R. O. Schwenker
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Propagation margins of contiguous disk devices fabricated on both single- and double-layer garnet films have been measured. These performance measurements for 1-μm diameter magnetic bubble propagation were made on devices with cell sizes of 18 and 30 μm2. The dependence of bias margin on ion-implantation conditions, material parameters, propagation pattern geometries, and temperature is discussed. Deuterium implantation is introduced, together with a new propagation pattern. Implantation with deuterium induces an anisotropy field change similar to that with hydrogen but with 50% smaller dosage. The new propagation pattern, with sawtooth-shaped tracks, reduces the interaction between charged walls of adjacent propagation tracks, thus resulting in improved performance at low bias fields. |
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| Related Subjects: Magnetic bubble technology; Storage (computer) devices and systems |
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