Germanium channel MOSFETs: Opportunities and challenges
by H. Shang, M. M. Frank, E. P. Gusev, J. O. Chu, S. W. Bedell, K. W. Guarini, M. Ieong
This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented.