Chemical and Ambient Effects on Surface Conduction in Passivated Silicon Semiconductors
by H. S. Lehman
The effect of processing variables on the surface conduction properties of passivated silicon junction devices has been studied. Insulated gate field-effect transistors fabricated in p-type silicon were used as an experimental tool. Varying the metal used as the gate electrode is shown to strongly influence the surface conductivity of the field-effect device. The effects of heat treatments in various ambients and variations in the insulators used are also discussed. Surface conduction is shown to be a complex function of materials, thermal history and processing.
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