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Computer Simulation of Electron-Beam Resist Profiles |
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by D. F. Kyser, R. Pyle
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A user-oriented, conversational computer program, LMS (Lithography Modeling System), has been developed for rapid investigation of the total lithographic process used in electron-beam lithography, including electron exposure and resist development. Electron scattering and energy deposition within the resist film are simulated with Monte Carlo techniques, including the significant effects of electrons backscattered from the substrate. The magnitude of and correction for the resulting intra- and inter-line proximity effects in the latent image and their dependence on variables such as beam voltage, film thickness, substrate material, and line-pattern geometries are easily investigated with LMS. The latent image in the resist film is transformed into a solubility-rate image. The time evolution of the developed-resist profile and its dependence on electron dose, solvent, etc. can also be determined. |
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| Related Subjects: Computer applications; Lithography |
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