IBM Journal of Research and Development
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Related Papers
2003Foundation of rf CMOS and SiGe BiCMOS technologies
2000Silicon:germanium-based mixed-signal technology for optimization of wired and wireless telecommunications
1995Atomic force microscopy studies of SiGe films and Si/SiGe heterostructures
1968X-ray Diffraction Topography of Germanium Wafers
1965Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron Diffraction
1962Direct Observation of Dislocation Loops in Arsenic-Doped Germanium
1962Electron Beam Microanalysis of Germanium Tunnel Diodes
1961Dislocations and Plastic Flow in Germanium
1961The Electronic Contribution to the Elastic Properties of Germanium
1960Dislocation Content in Epitaxially Vapor-Grown Ge Crystals
1960Electrical Properties of Vapor-Grown Ge Junctions
1960Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle Process
1960Germanium-Gallium Arsenide Heterojunctions
1960Incorporation of As into Vapor-Grown Ge
1960Incorporation of Au into Vapor-Grown Ge
1960Radiotracer Studies of the Incorporation of Iodine into Vapor-Grown Ge
1960Tunnel Diodes by Vapor Growth of Ge on Ge and on GaAs
1959Direct Measurement of the Angular Dependence of the Imaginary Part of the Atomic Scattering Factor of Germanium
1959Germanium PNPN Thyratron