Numerical modeling of advanced semiconductor devices
by W. Lee, S. E. Laux, M. V. Fischetti, G. Baccarani, A. Gnudi, J. M. C. Stork, J. A. Mandelman, E. F. Crabbé, M. R. Wordeman, F. Odeh
Numerical modeling of the electrical behavior of semiconductor devices is playing an increasingly important role in their development. Examples that pertain to advanced MOSFETs and bipolar transistors are presented to illustrate the importance of taking into account three-dimensional as well as nonequilibrium and nonlocal physical phenomena to effectively characterize the electrical behavior of such devices.