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IBM Journal of Research and Development  
Volume 15, Number 4, Page 313 (1971)
Arsenic-emitter Transistors
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Equivalent Circuit for Conductivity-Temperature Characteristics of the PdO/Ag-Pd Glaze Resistor

by G. J. Kahan
It is shown that a reasonable fit of experimental to calculated data can be obtained with a simple model of the PdO/Ag-Pd glaze resistor. An equivalent circuit describing the temperature characteristics of the glaze resistor is proposed. The experimental measurements can be reproduced quite adequately over a considerable temperature range, using an equivalent circuit consisting of a semiconductor contact resistance in parallel with a metal. A quadratic term in (1/T2) in addition to the usual linear term with (1/T) for ln σ is used to obtain a good fit at low temperatures. (T = absolute temperature; σ = conductivity.) This parabolic curve approaches the experimentally observed values for palladium oxide.
Related Subjects: Silver