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Foundation of rf CMOS and SiGe BiCMOS technologies |
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by J. S. Dunn, D. C. Ahlgren, D. D. Coolbaugh, N. B. Feilchenfeld, G. Freeman, D. R. Greenberg, R. A. Groves, F. J. Guarín, Y. Hammad, A. J. Joseph, L. D. Lanzerotti, S. A. St.Onge, B. A. Orner, J.-S. Rieh, K. J. Stein, S. H. Voldman, P.-C. Wang, M. J. Zierak, S. Subbanna, D. L. Harame, D. A. Herman,Jr., B. S. Meyerson
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This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and
device selection were geared toward usage in mixed-signal IC development. |
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| Related Subjects: CMOS; Germanium; Heterostructures and heterojunctions; Silicon-germanium |
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