IBM Journal of Research and Development
IBM Skip to main content
  Home     Products & services     Support & downloads     My account  

  Select a country  
Journals Home  
  Systems Journal  
Journal of Research
and Development
    Current Issue  
    Recent Issues  
    Papers in Progress  
    Search/Index  
    Orders  
    Description  
    Patents  
    Recent publications  
    Author's Guide  
  Staff  
  Contact Us  
  Related links:  
     IBM Research  

IBM Journal of Research and Development  
Volume 32, Number 3, Page 372 (1988)
Mesoscopic Phenomena and Nanolithographic ...
  Full article: arrowPDF   arrowCopyright info





   

Electronic transport in small strongly localized structures

by A. B. Fowler, J. J. Wainer, R. A. Webb
We review some recent results on the low-temperature transport properties (T < 4K) of very small silicon metal-oxide field-effect transistors in the insulating regime of conduction. Our devices are lithographically patterned to have widths as small as 0.05 μm and lengths as short as 0.06 μm. These small transistors exhibit new and unexpected sample-specific fluctuation behavior in the gate voltage, temperature, and magnetic field dependence of the conductance. We discuss both resonant tunneling and Mott variable-range hopping, the two main transport mechanisms in these devices at low temperature.
Related Subjects: Carrier transport in small structures; Mesoscopic phenomena; Physics, solid state