Modification of Semiconductor Device Characteristics by Lasers
by Y. C. Kiang, J. R. Moulic, W.-K. Chu, A. C. Yen
The paper discusses an emerging area of laser-semiconductor processing: the effect of laser irradiation on the electrical parameters of diffused-junction devices. Shallow diffusions of 0.2- to 0.5-μm depths have been achieved. Transistor current gains have been modified and the results agree with the theoretical analysis.