IBM Journal of Research and Development
IBM Skip to main content
  Home     Products & services     Support & downloads     My account  

  Select a country  
Journals Home  
  Systems Journal  
Journal of Research
and Development
    Current Issue  
    Recent Issues  
    Papers in Progress  
    Recent publications  
    Author's Guide  
  Contact Us  
  Related links:  
     IBM Research  

IBM Journal of Research and Development  
Volume 32, Number 4, Page 494 (1988)
Mesoscopic Phenomena and Nanolithographic ...
  Full article: arrowPDF   arrowCopyright info


High-throughput, high-resolution electron-beam lithography

by H. C. Pfeiffer, T. R. Groves, T. H. Newman
The introduction of the shaped-beam imaging technique has greatly enhanced the exposure efficiency of electron-beam lithography systems. IBM's EL systems provide the throughput needed for lithography applications in semiconductor fabrication lines. The resolution of these systems has been steadily improved over the past 15 years in support of the semiconductor lithography trend toward submicron dimensions. This paper describes the latest version (EL-3 system) capable of fabricating 0.25-μm features. The technical challenges of submicron e-beam lithography are discussed, and practical solutions together with experimental results are presented.
Related Subjects: Lithography, Electron-beam