A scanning tunneling microscope for the investigation of the growth of metal films on semiconductor surfaces
by T. Berghaus, H. Neddermeyer, S. Tosch
We describe a scanning tunneling microscope which is part of an apparatus designed for the investigation of metal-semiconductor surfaces. The main parts of the tunneling unit are the piezoelectric walker ("louse") carrying the sample for the coarse approach and a piezoelectric xyz system for movement of the tip. The xyz system is self-compensating with regard to uniform thermal expansion. Our first measurements have been obtained on a Au(110) surface. The spatial resolution allows the observation of monoatomic steps. Corrugation perpendicular to the rows and troughs of the (110) surface with an amplitude around 1 Å is also visible. The noise in the z direction under optimum conditions is smaller than 0.2 Å rms.