IBM Journal of Research and Development
IBM Skip to main content
  Home     Products & services     Support & downloads     My account  

  Select a country  
Journals Home  
  Systems Journal  
Journal of Research
and Development
    Current Issue  
    Recent Issues  
    Papers in Progress  
    Recent publications  
    Author's Guide  
  Contact Us  
  Related links:  
     IBM Research  

IBM Journal of Research and Development  
Volume 25, Number 4, Page 218 (1981)
Finite Element Analysis
  Full article: arrowPDF   arrowCopyright info


Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program

by E. M. Buturla, P. E. Cottrell, B. M. Grossman, K. A. Salsburg
The FIELDAY program simulates semiconductor devices of arbitrary shape in one, two, or three dimensions operating under transient or steady-state conditions. A wide variety of physical effects, important in bipolar and field-effect transistors, can be modeled. The finite-element method transforms the continuum description of mobile carrier transport in a semiconductor device to a simulation model at a discrete number of points. Coupled and decoupled algorithms offer two methods of linearizing the differential equations. Direct techniques are used to solve the resulting matrix equations. Pre- and post-processors enable users to rapidly generate new models and analyze results. Specific examples illustrate the flexibility and accuracy of FIELDAY.
Related Subjects: Algorithms; Analytical models; Models and modeling; Semiconductor devices