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IBM Journal of Research and Development  
Volume 28, Number 4, Page 454 (1984)
Nontopical Issue
  Full article: arrowPDF   arrowCopyright info


Resist profile control in E-beam lithography

by S. J. Gillespie
Imaging studies have confirmed that a desired resist profile can be obtained by selecting the appropriate combination of process parameters: dose, interrupted development, pattern bias, and resist thickness. Bias sensitivity of the resist image to process parameters was measured using a positive diazo resist with nonlinear development characteristics on an IBM EL-3 E-beam tool. Because of superior bias stability, top-edge imaging with undercut profiles in a single-layer resist was found to provide many of the imaging advantages of a multilayer system. Sufficient resolution and image quality are obtained to extend the application of a single-layer resist system to 1-μm lithography.
Related Subjects: Lithography; LSI; Semiconductor technology