Digital Simulation of Magnetic Czochralski Flow Under Various Laboratory Conditions for Silicon Growth
by W. E. Langlois, K.-J. Lee
Previous digital simulations have suggested that an axial magnetic field in the 0.1-T (1000-Gs) range can effectively suppress convection in Czochralski growth of silicon. The present paper treats the matter more quantitatively by investigating the convection in a variety of flow conditions corresponding to typical Czochralski growth of silicon on a laboratory scale.