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IBM Journal of Research and Development  
Volume 27, Number 3, Page 281 (1983)
Systems Architecture
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Digital Simulation of Magnetic Czochralski Flow Under Various Laboratory Conditions for Silicon Growth

by W. E. Langlois, K.-J. Lee
Previous digital simulations have suggested that an axial magnetic field in the 0.1-T (1000-Gs) range can effectively suppress convection in Czochralski growth of silicon. The present paper treats the matter more quantitatively by investigating the convection in a variety of flow conditions corresponding to typical Czochralski growth of silicon on a laboratory scale.
Related Subjects: Materials; Physical chemistry; Physics; Simulation