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IBM Journal of Research and Development  
Volume 22, Number 2, Page 159 (1978)
Nontopical Issue
  Full article: arrowPDF   arrowCopyright info


Variational Principles for Semiconductor Device Modeling with Finite Elements

by J. H. Hohl
Variational principles related to three areas of semiconductor device modeling by the finite element method are presented. Some subtle points which are crucial to the successful application of the method are explored. It is suggested that the validity of the selected variational formulations must be carefully ensured, and that the physics disciplines provide the best guidance for the right selections.
Related Subjects: Computational methods; Mathematics (applied); Models and modeling; Semiconductor technology