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IBM Journal of Research and Development  
Volume 29, Number 3, Page 277 (1985)
Semiconductor Device Modeling
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VLSI wiring capacitance

by P. E. Cottrell, E. M. Buturla
Accurate prediction of device current and the capacitance to be driven by that current is key to the design of integrated logic and memory circuits. A finite-element algorithm is described which simulates the capacitance of structures with general shape in two or three dimensions. Efficient solution of the linear equations is provided by the incomplete Cholesky conjugate gradient method. The model is used to simulate the wiring capacitance of a 1.25-micrometer VLSI technology. The predicted capacitances of closely spaced first-metal polycide-gate and second-metal conductors used in this technology agree with measured results. The simulated three-dimensional capacitance of a second-metal line crossing a first-metal line is twice that found when estimated by two-dimensional models. The effect of line-to-line capacitance on the noise margin of logic circuits and on the signal in a dynamic RAM is examined. This capacitance presents a limit to wiring density for logic circuits and is a significant signal detractor in dynamic RAMs with closely spaced metal or diffused bit lines.
Related Subjects: Capacitance; LSI design automation; Manufacturing; Models and modeling; Semiconductor technology; VLSI