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IBM Journal of Research and Development  
Volume 19, Number 2, Page 146 (1975)
Nontopical Issue
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High Speed Transistor with Double Base Diffusion

by S. Magdo, I. Magdo
A high speed bipolar transistor has been fabricated by using double base diffusion to reduce the base resistance RB. The base resistance forms two important time constants, RBCD and RBCC(RL/RE) with the emitter diffusion capacitance CD and collector capacitance CC dominating the switching delay of the circuits. We demonstrate that the base resistance of a single base diffused device can be reduced by a factor of four by using double base diffusion without affecting its cut-off frequency ft = 7 GHz. The double base diffusion also increases the punchthrough voltage of the device from 3 to 7V.
Related Subjects: Physics, solid state; Semiconductor devices