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IBM Journal of Research and Development  
Volume 26, Number 5, Page 580 (1982)
Semiconductor Manufacturing Technology
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Optimization of Plasma Processing for Silicon-Gate FET Manufacturing Applications

by A. S. Bergendahl, S. F. Bergeron, D. L. Harmon
The development and implementation of plasma processing techniques for silicon-gate FET manufacturing applications is described. Process requirements are discussed for the stripping of photoresist and the isotropic etching of thin films. A systematic approach for the optimization of these processes, involving the use of statistically designed multiparametric experimentation (MPE), is presented. This approach, in combination with the use of response-surface analysis techniques, is illustrated by examples of its application to typical processing problems. In addition, the multiparametric optimization of anisotropic etching is presented for potential plasma processing enhancements.
Related Subjects: Analytical models; Manufacturing; Models and modeling; Semiconductor technology